Connection structure and method of forming the same

ABSTRACT

Provided is a connection structure for a semiconductor package which includes: a first passivation layer having an opening; a first conductive pattern that penetrates the first passivation layer and protrudes upwardly from the first passivation layer; a second passivation layer on the first passivation layer and covering the first conductive pattern; a second conductive pattern on the second passivation layer and electrically connected to the first conductive pattern; a third passivation layer on the second passivation layer and covering the second conductive pattern; and an external terminal in the opening and electrically connected to the first conductive pattern, wherein the first conductive pattern is thicker than the second conductive pattern.

CROSS-REFERENCE TO THE RELATED APPLICATION

This application claims priority from Korean Patent Application No.10-2018-0155947 filed on Dec. 6, 2018 in the Korean IntellectualProperty Office, the disclosure of which is incorporated herein byreference.

BACKGROUND

Example embodiments of the present inventive concepts relate to aconnection structure for a semiconductor package and a method of formingthe same.

Semiconductor chips are increasingly downsized with the continuousdevelopment of semiconductor technology. In contrast, various functionsare integrated into a single semiconductor chip. Therefore,semiconductor chips have a great number of input/output pads on a smallarea.

As a result, an improved semiconductor chip packaging has beenconsidered.

SUMMARY

Example embodiments of the inventive concepts provide a connectionstructure with improved structural stability for a semiconductor packageand a method of forming the same.

The example embodiments also provide a connection structure withenhanced electrical characteristics for a semiconductor package and amethod of forming the same.

The example embodiments further provide a connection structure withoutpattern abnormality for a semiconductor package and a method of formingthe same.

According to an aspect of the example embodiments, there is provided aconnection structure which may include: a first passivation layer havingan opening; a first conductive pattern that penetrates the firstpassivation layer and protrudes upwardly from the first passivationlayer; a second passivation layer on the first passivation layer andcovering the first conductive pattern; a second conductive pattern onthe second passivation layer and electrically connected to the firstconductive pattern; a third passivation layer on the second passivationlayer and covering the second conductive pattern; and an externalterminal in the opening and electrically connected to the firstconductive pattern. The first conductive pattern may be thicker than thesecond conductive pattern.

According to an aspect of the example embodiments, there is provided aconnection structure which may include: a carrier substrate; a firstpassivation layer, a second passivation layer, and a third passivationlayer that are sequentially provided on the carrier substrate; a firstconductive pattern that penetrates the first passivation layer andprotrudes upwardly from the first passivation layer; and a secondconductive pattern on the second passivation layer and electricallyconnected to the first conductive pattern. The first conductive patternmay be thicker than the second conductive pattern.

According to an aspect of the example embodiments, there is provided amethod of forming a connection structure which may include: forming on acarrier substrate a first passivation layer having a plurality of firstopenings; forming a plurality of first conductive patterns that fill thefirst openings and protrude upwardly from the first passivation layer;forming on the first passivation layer a second passivation layer havinga plurality of second openings that expose the first conductivepatterns; forming on the second passivation layer a plurality of secondconductive patterns that fill the second openings and have electricalconnection with the first conductive patterns; and forming on the secondpassivation layer a third passivation layer that covers the secondconductive patterns.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1G illustrate cross-sectional views showing a method offorming a connection structure for a semiconductor package according toexample embodiments.

FIG. 1H illustrates an enlarged cross-sectional view showing a portionof FIG. 1G according to example embodiments.

FIGS. 2A to 2C illustrate cross-sectional views showing examples of theconnection structure shown in FIG. 1G used for a semiconductor packageaccording to example embodiments.

FIGS. 3A to 3D illustrate cross-sectional views showing a method offabricating a semiconductor package according to example embodiments.

FIGS. 4A to 4F illustrate cross-sectional views showing examples of thesemiconductor package shown in FIG. 3D according to example embodiments.

DETAILED DESCRIPTION OF THE EXAMPLE EMBODIMENTS

The following will now describe a connection structure for asemiconductor package and a method of forming the same according toexample embodiments of the inventive concepts in conjunction with theaccompanying drawings.

The advantages and aspects of the inventive concepts will be apparentthrough the appended claims and the specification discussed withreference to the accompanying drawings. The inventive concepts aredistinctly claimed and particularly pointed out in the claims. However,the inventive concepts may best be understood by reference to thespecification in conjunction with the accompanying drawings. In thespecification, like reference numerals refer to like componentsthroughout the accompanying drawings.

It will be understood that when an element or layer is referred to asbeing “over,” “above,” “on,” “connected to” or “coupled to” anotherelement or layer, it can be directly over, above, on, connected orcoupled to the other element or layer or intervening elements or layersmay be present. In contrast, when an element is referred to as being“directly over,” “directly above,” “directly on,” “directly connectedto” or “directly coupled to” another element or layer, there are nointervening elements or layers present Like numerals refer to likeelements throughout.

Spatially relative terms, such as “beneath,” “below,” “lower,” “over,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element's or feature's relationship toanother element(s) or feature(s) as illustrated in the figures. It willbe understood that the spatially relative terms are intended toencompass different orientations of the device in use or operation inaddition to the orientation depicted in the figures. For example, if thedevice in the figures is turned over, elements described as “below” or“beneath” other elements or features would then be oriented “above” theother elements or features. Thus, the term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

FIGS. 1A to 1G illustrate cross-sectional views showing a method offorming a connection structure for a semiconductor package according toexample embodiments. FIG. 1H illustrates an enlarged cross-sectionalview showing a portion of FIG. 1G.

Referring to FIG. 1A, a carrier substrate 100 may be provided. Thecarrier substrate 100 may be a rigid substrate including a conductivematerial, a semiconductor material, or a dielectric material. Forexample, the carrier substrate 100 may be a bare silicon wafer or aglass substrate. A lower passivation layer 105 may be formed on thecarrier substrate 100.

The lower passivation layer 105 may include a dielectric material. Forexample, the lower passivation layer 105 may be formed by depositingsilicon oxide, silicon nitride, or polymer. A dielectric material may bedeposited on the lower passivation layer 105, and then, patterned toform a first passivation layer 110 having one or more first openings111.

The first passivation layer 110 may include a material the same as orsimilar to that of the lower passivation layer 105. For example, thefirst passivation layer 110 may include silicon oxide, silicon nitride,or polymer. Each of the first openings 111 may partially reveal thelower passivation layer 105. When viewed in plan, each of the firstopenings 111 may have a circular shape, an elliptical shape, arectangular shape, a polygonal shape, or an arbitrary shape.

An adhesive layer 101 may further be provided between the carriersubstrate 100 and the lower passivation layer 105. The adhesive layer101 may be a photosensitive adhesive. In the following descriptions, theadhesive layer 101 will be omitted in the interest of brevity.

Referring to FIG. 1B, the carrier substrate 100 may be provided thereonwith a first seed layer 112 a having a relatively smaller thickness anda first conductive layer 114 a having a relatively larger thickness. Thefirst seed layer 112 a may cover the first passivation layer 110, andalso cover the lower passivation layer 105 that is partially exposedthrough the first openings 111. The first conductive layer 114 a mayhave a thickness sufficient enough to cover the first seed layer 112 aand fill the first openings 111.

The first seed layer 112 a may be formed by plating or depositing metalor its alloy, such as copper (Cu), titanium (Ti), a combination thereof,or an alloy thereof, the same as or similar to that of the firstconductive layer 114 a. The first conductive layer 114 a may be formedby an electroplating process using the first seed layer 112 a. The firstconductive layer 114 a may include, for example, copper (Cu), aluminum(Al), nickel (Ni), gold (Au), silver (Ag), platinum (Pt), a combinationthereof, or an alloy thereof.

Referring to FIG. 1C, the first seed layer 112 a and the firstconductive layer 114 a may be converted respectively into first seedpatterns 112 and first conductive patterns 114. For example, the firstseed layer 112 a may be patterned to form the first seed patterns 112separated from one another. Likewise, the first conductive layer 114 amay be patterned to form the first conductive patterns 114 separatedfrom one another. The first seed layer 112 a and the first conductivelayer 114 a may be patterned at the same time. The first conductivepatterns 114 may fill corresponding first openings 111 and partiallyprotrude upwardly from the first passivation layer 110. The first seedpatterns 112 may be provided below corresponding first conductivepatterns 114. For example, the first seed patterns 112 may cover bottomsurfaces of the corresponding first conductive patterns 114.

Each of the first conductive patterns 114 may have a “T” shape whenviewed in cross-section. When viewed in cross-section, each of the firstseed patterns 112 may have a curved shape that extends along the bottomsurface of the corresponding first conductive pattern 114. When viewedin plan, each of the first seed pattern 112 and the first conductivepattern 114 may have a circular shape, an elliptical shape, arectangular shape, a polygonal shape, or an arbitrary shape.

Referring to FIG. 1D, a second passivation layer 120 may be formed tocover the first passivation layer 110. For example, a dielectricmaterial may be deposited on the first passivation layer 110, and then,patterned to form the second passivation layer 120 having one or moresecond openings 121. The second passivation layer 120 may include amaterial the same as or similar to that of the first passivation layer110. For example, the second passivation layer 120 may include siliconoxide, silicon nitride, or polymer. Each of the second openings 121 maypartially reveal the first conductive pattern 114 therebelow. Whenviewed in plan, each of the second openings 121 may have a circularshape, an elliptical shape, a rectangular shape, a polygonal shape, oran arbitrary shape.

Referring to FIG. 1E, the second passivation layer 120 may be providedthereon with a second seed layer 122 a having a relatively smallerthickness and a second conductive layer 124 a having a relatively largerthickness. The second seed layer 122 a may cover the second passivationlayer 120, and also cover the first conductive patterns 114 that arepartially exposed through the second openings 121. The second conductivelayer 124 a may have a thickness sufficient enough to cover the secondseed layer 122 a and fill the second openings 121.

The formation of the second seed layer 122 a and the second conductivelayer 124 a may be the same as or similar to that of the first seedlayer 112 a and the first conductive layer 114 a discussed above withreference to FIG. 1B. For example, the second seed layer 122 a may beformed by plating or depositing metal or its alloy, such as copper (Cu),titanium (Ti), a combination thereof, or an alloy thereof. The secondconductive layer 124 a may be formed by an electroplating process inwhich the second seed layer 122 a is used to plate metal, such as copper(Cu) or its alloy.

Referring to FIG. 1F, the second seed layer 122 a and the secondconductive layer 124 a may be patterned at the same time. Therefore, thesecond seed layer 122 a may be formed into second seed patterns 122separated from one another. Likewise, the second conductive layer 124 amay be formed into second conductive patterns 124 separated from oneanother. The second conductive patterns 124 may fill correspondingsecond openings 121 and have electrical connection with correspondingfirst conductive patterns 114. The second seed patterns 122 may beprovided below corresponding second conductive patterns 124.

Each of the second conductive patterns 124 may have a line segment thathorizontally extends on the second passivation layer 120 and a viasegment that vertically penetrates the second passivation layer 120.When viewed in cross-section, each of the second seed patterns 122 mayhave a curved shape that extends along a bottom surface of thecorresponding second conductive pattern 124.

Referring to FIG. 1G, processes identical or similar to those discussedabove with reference to FIG. 1A to 1C or 1D to 1F may be performed toform on the second passivation layer 120 a third passivation layer 130,third seed patterns 132, and third conductive patterns 134. The thirdconductive patterns 134 may be electrically connected to correspondingsecond conductive patterns 124. A fourth passivation layer 140, fourthseed patterns 142, and fourth conductive patterns 144 may be formed onthe third passivation layer 130. The fourth conductive patterns 144 maybe electrically connected to corresponding third conductive patterns134.

A first connection structure 11 may be provided through the processesdiscussed above. The first connection structure 11 may be formed in awafer level or a chip level. For example, when the carrier substrate 100is a bare silicon wafer or a glass substrate whose size (e.g., diameter)is identical or similar to that of the bare silicon wafer, a dicingprocess may further be performed to separate the wafer-level carriersubstrate 100 into a plurality of chip-level first connection structures11.

Because the first connection structure 11 includes the rigid carriersubstrate 100, the first connection structure 11 may have mechanical andstructural stability. Therefore, the first connection structure 11 maybe prevented from warpage and/or damage, and also be easily handled insubsequent processes. The first connection structure 11 may be worked insubsequent processes, and then, utilized as a package substrate for asemiconductor package or an interposer substrate for any othersemiconductor devices. These utilizations will be discussed below withreference to FIGS. 3A to 3D and 4A to 4F.

For the first connection structure 11, the first conductive pattern 114may serve as an under-bump-metal (UBM) to which a terminal, such as asolder ball, is to be attached. In contrast, each of the second andthird conductive patterns 124 and 134 may serve as a redistributionlayer electrically connected to the first conductive pattern 114. Thefourth conductive pattern 144 may be electrically connected to the firstconductive pattern 114 through the second and third conductive patterns124 and 134, and may be used as a connection pad to which a terminal,such as a solder ball or a solder bump, is to be attached. For anotherexample, the fourth conductive pattern 144 may serve as a redistributionlayer.

In certain embodiments, the third conductive patterns 134 and/or thefourth conductive patterns 144 may not be formed. For example, the firstconnection structure 11 may include the first conductive patterns 114serving as under-bump-metals (UBMs) and the second conductive patterns124 serving as redistribution layers, but include neither the thirdconductive patterns 134 nor the fourth conductive patterns 144. Foranother example, the first connection structure 11 may include the firstconductive patterns 114 serving as under-bump-metals (UBMs), the secondconductive patterns 124 serving as redistribution layers, and the fourthconductive patterns 144 serving as connection pads, but not include thethird conductive patterns 134. In other embodiments, the firstconnection structure 11 may further include conductive patterns servingas redistribution layers between the third conductive patterns 134 andthe fourth conductive patterns 144.

Each of the first, second, third, and fourth conductive patterns 114,124, 134, and 144 may have a head segment that horizontally extends on acorresponding one of the first, second, third, and fourth passivationlayers 110, 120, 130, and 140, and a tail segment that verticallypenetrates the corresponding one of the first, second, third, and fourthpassivation layers 110, 120, 130, and 140. The head and tail segments ofthe first conductive pattern 114 may be integrally merged to constitutea single under-bump-metal (UBM). Differently, the tail segment of eachof the second, third, and fourth conductive patterns 124, 134, and 144may serve as a via. The head segment of each of the second and thirdconductive patterns 124 and 134 may be a redistribution layer, and thehead segment of the fourth conductive pattern 144 may be a connectionpad.

Referring to FIG. 1H, the first conductive pattern 114 may have athickness greater than those of the second, third, and fourth conductivepatterns 124, 134, and 144. For convenience of description, the firstseed pattern 112 may be a constituent element included in the firstconductive pattern 114. This explanation will also be applicable to thesecond, third, and fourth conductive patterns 124, 134, and 144.

The first conductive pattern 114 may have a first thickness T1 greaterthan second, third, and fourth thicknesses T2, T3, and T4 respectivelyof the second, third, and fourth conductive patterns 124, 134, and 144.The second, third, and fourth thicknesses T2, T3, and T4 may be the sameor similar to each other. Alternatively, the second and thirdthicknesses T2 and T3 may be the same or similar to each other, and thefourth thickness T4 may be greater or less than each of the second andthird thicknesses T2 and T3. The first thickness T1 may indicate a totalthickness of the first conductive pattern 114, and each of the second,third, and fourth thicknesses T2, T3, and T4 may indicate a thickness ofa substantial portion, i.e., the head segment of a corresponding one ofthe second, third, and fourth conductive patterns 124, 134, and 144.

The first, second, third, and fourth passivation layers 110, 120, 130,and 140 may have different thicknesses from each other. For example, thefirst passivation layer 110 may have a first thickness Tp1 the same asor similar to a third thickness Tp3 of the third passivation layer 130and a fourth thickness Tp4 of the fourth passivation layer 140.Alternatively, the first thickness Tp1 may be greater or less than eachof the third and fourth thicknesses Tp3 and Tp4. The second passivationlayer 120 may have a second thickness Tp2 greater than each of thefirst, third, and fourth thicknesses Tp1, Tp3, and Tp4. Differently, thefirst, second, third, and fourth passivation layers 110, 120, 130, and140 may have the same or similar thickness.

Referring back to FIG. 1G, as discussed above with reference to FIGS. 1Ato 1D, the first conductive patterns 114 may be formed after the firstpassivation layer 110 is formed, and then, on the first passivationlayer 110, the second passivation layer 120 may be formed to cover thefirst conductive patterns 114. Although the first conductive patterns114 are thicker than the second, third, and fourth conductive patterns124, 134, and 144 as discussed above with reference to FIG. 1H, becausethe first passivation layer 110 is previously formed to surround thetail segments of the first conductive patterns 114, the secondpassivation layer 120 may be formed to cover only the head segment ofthe first conductive pattern 114, in which case the head segment has athickness less than the first thickness T1 of the first conductivepattern 114. As a result, the second passivation layer 120 may be formedflat without undulation (or wavy shape) which will be discussed below.

Differently from that mentioned above, when a certain passivation layeris formed to cover the first conductive patterns 114 after the firstconductive patterns 114 are formed relatively thick either on thecarrier substrate 100 or on the lower passivation layer 105, it may belikely that the certain passivation layer has undulation betweenneighboring first conductive patterns 114. In case that the secondconductive patterns 124 are formed on the certain passivation layer, thesecond conductive patterns 124 may bend along the undulation of thecertain passivation layer. The certain passivation layer having theundulation may bring pattern abnormality to the second conductivepatterns 124 formed on the certain passivation layer, and further causepattern abnormality of any other conductive patterns formed on thesecond conductive patterns 124. Such pattern abnormality of conductivepatterns may lead to an electrical short or open between the conductivepatterns.

According to example embodiments, because the first passivation layer110 is formed before the first conductive patterns 114, and then, thesecond passivation layer 120 is formed to cover the first conductivepatterns 114, the second passivation layer 120 may have a flat shapewithout undulation. Thus, conductive patterns may be prevented fromproblems such as pattern abnormality caused by undulations ofpassivation layers.

FIGS. 2A to 2C illustrate cross-sectional views showing examples of theconnection structure shown in FIG. 1G for a semiconductor packageaccording to example embodiments.

Referring to FIG. 2A, a second connection structure 12 may be providedto further include at least one first dummy pattern 114 d and/or atleast one second dummy pattern 124 d. For example, one or more firstdummy patterns 114 d may be formed simultaneously with the firstconductive patterns 114. Similarly, one or more second dummy patterns124 d may be formed simultaneously with the second conductive patterns124. Although not shown, third dummy patterns may further be formed onthe third passivation layer 130.

Each of the first dummy patterns 114 d may be provided on the firstpassivation layer 110 between neighboring first conductive patterns 114.The first seed patterns 112 may be provided between the firstpassivation layer 110 and the first dummy patterns 114 d. The firstdummy patterns 114 d may forbid the second passivation layer 120 to haveundulation between the first conductive patterns 114. When viewed inplan, each of the first dummy patterns 114 d may have a rectangularshape, a polygonal shape, a circular shape, an elliptical shape, or anarbitrary shape.

Each of the second dummy patterns 124 d may be provided on the secondpassivation layer 120 between neighboring second conductive patterns124. The second seed patterns 122 may be provided between the secondpassivation layer 120 and the second dummy patterns 124 d. The seconddummy patterns 124 d may forbid the third passivation layer 130 to haveundulation between the second conductive patterns 124. When viewed inplan, each of the second dummy patterns 124 d may have a rectangularshape, a polygonal shape, a circular shape, an elliptical shape, or anarbitrary shape.

Referring to FIG. 2B, a third connection structure 13 may be provided tofurther include first, second, third, and fourth additional patterns 114g, 124 g, 134 g, and 144 g. For example, one or more first additionalpatterns 114 g may be formed simultaneously with the first conductivepatterns 114. Each of the first additional patterns 114 g may beprovided on the first passivation layer 110 between neighboring firstconductive patterns 114. The first seed patterns 112 may be providedbetween the first passivation layer 110 and the first additionalpatterns 114 g. The position of the first additional patterns 114 g maynot be limited between the first conductive patterns 114.

Similarly, the second, third, and fourth passivation layers 120, 130,and 140 may be respectively provided thereon with the second, third, andfourth additional patterns 124 g, 134 g, and 144 g that are electricallyconnected to the first additional patterns 114 g. The second, third, andfourth additional patterns 124 g, 134 g, and 144 g may be formedsimultaneously with the second, third, and fourth conductive patterns124, 134, and 144, respectively. The first, second, third, and fourthadditional patterns 114 g, 124 g, 134 g, and 144 g may serve asconductive patterns either for electrical power delivery or forelectrical ground. The first, second, and third additional patterns 114g, 124 g, and 134 g may prevent pattern abnormality such as undulationoccurring when the second, third, and fourth passivation layers 120,130, and 140 are formed.

The first, second, third, and fourth additional patterns 114 g, 124 g,134 g, and 144 g may have their planar shapes the same as or similar tothose of the first, second, third, and fourth conductive patterns 114,124, 134, and 144, respectively. For example, when viewed in plan, thefirst additional patterns 114 g may have a shape, such as a circularshape, the same as or similar to that of the first conductive patterns114.

Referring to FIG. 2C, a fourth connection structure 14 may be provideddevoid of the lower passivation layer 105. For example, the firstpassivation layer 110 may be formed directly on the carrier substrate100, or an adhesive layer (see 101 of FIG. 1) may be provided to formthe first passivation layer 110 on the carrier substrate 100.Optionally, the first dummy patterns 114 d and the second dummy patterns124 d may further be formed. Instead of the first and second dummypatterns 114 d and 124 d, the first to fourth additional patterns 114 gto 144 g may further be formed as shown in FIG. 2B.

FIGS. 3A to 3D illustrate cross-sectional views showing a method offabricating a semiconductor package according to example embodiments.

Referring to FIG. 3A, a semiconductor chip 200 may be provided on thefirst connection structure 11. The semiconductor chip 200 may include amemory circuit, a logic circuit, or a combination thereof. Thesemiconductor chip 200 may include chip pads 210 corresponding to thefourth conductive patterns 114. Connection terminals 220, such as solderballs, may be provided between the chip pads 210 and the fourthconductive patterns 144. The semiconductor chip 200 may be electricallyconnected through the connection terminals 220 to the first connectionstructure 11.

Referring to FIG. 3B, a molding layer 240 may be formed on the firstconnection structure 11, covering the semiconductor chip 200. Themolding layer 240 may include an epoxy molding compound (EMC).Optionally, before the molding layer 240 is formed, an under-fill layer230 may further be formed between the first connection structure 11 andthe semiconductor chip 200. The under-fill layer 230 may include amaterial the same as or similar to that of the molding layer 240.

Referring to FIG. 3C, the carrier substrate 100 may be removed. When thecarrier substrate 100 and the lower passivation layer 105 havetherebetween the adhesive layer 101 shown in FIG. 1A, the adhesive layer101 may be irradiated with laser or ultraviolet radiation to detach thecarrier substrate 100 from the lower passivation layer 105. A patterningprocess may be performed on the lower passivation layer 105 that isrevealed due to the detachment of the carrier substrate 100, and thus,openings 106 may be formed to expose the first conductive patterns 114.For example, the openings 106 may be formed by performing an etchingprocess on the lower passivation layer 105. Therefore, the openings 106may establish locations on which external terminals are to be formed(see 108 of FIG. 3D), as will be discussed below. An etching process maybe optionally performed to remove a portion of the first seed pattern112 which is exposed through the opening 106.

Referring to FIG. 3D, external terminals 108 may be formed to haveelectrical connection with the first conductive patterns 114. Forexample, a solder may be provided and reflowed to form the externalterminals 108, such as solder balls, corresponding to the firstconductive patterns 114. Hence, a semiconductor package 1 may befabricated to include the semiconductor chip 200 mounted on the firstconnection structure 11. The first connection structure 11 may serve asa package substrate of the semiconductor package 1.

As discussed above with reference to FIG. 3C, a portion of the firstseed pattern 112 exposed through the opening 106 may be removed.Accordingly, the first seed pattern 112 may not be provided between thefirst conductive pattern 114 and the external terminal 108. In thiscase, an intermetallic compound may not be created at an interfacebetween the first conductive pattern 114 and the external terminal 108.Additionally or alternatively, the solder used for the formation of theexternal terminal 108 may have improved wettability on the firstconductive pattern 114. The partial removal of the first seed pattern112 may not be an essential process, and accordingly, may be omitted ifnot necessary.

FIGS. 4A to 4F illustrate cross-sectional views showing examples of thesemiconductor package shown in FIG. 3D according to example embodiments.

Referring to FIG. 4A, a semiconductor package 2 may be provided toinclude the semiconductor chip 200 mounted on the first connectionstructure 11 serving as a package substrate. A portion of the first seedpattern 112 exposed through the opening 106 may not be removed.Accordingly, the first seed pattern 112 may be interposed between thefirst conductive pattern 114 and the external terminal 108.

The first connection structure 11 may be replaced with one of thesecond, third, and fourth connection structures 12, 13, and 14, as willbe discussed below with reference to FIGS. 4B to 4E. This detaileddescription may be as follows.

Referring to FIG. 4B, a semiconductor package 3 may be provided toinclude the semiconductor chip 200 mounted on the second connectionstructure 12 serving as a package substrate. As discussed above withreference to FIG. 2A, the second connection structure 12 may include oneor more first dummy patterns 114 d formed on the first passivation layer110 between neighboring first conductive patterns 114, and one or moresecond dummy patterns 124 d formed on the second passivation layer 120between neighboring second conductive patterns 124. The first and seconddummy patterns 114 d and 124 d may be electrically isolated, and thus,may have no participation in electrical connection between the secondconnection structure 12 and the semiconductor chip 200. As discussedabove with reference to FIG. 2A, the first and second dummy patterns 114d and 124 d may prevent pattern abnormality such as undulation occurringwhen the second and third passivation layers 120 and 130 are formed.

Referring to FIG. 4C, a semiconductor package 4 may be provided toinclude the semiconductor chip 200 mounted on the third connectionstructure 13 serving as a package substrate. As discussed above withreference to FIG. 2B, the third connection structure 13 may include thefirst, second, third, and fourth additional patterns 114 g, 124 g, 134g, and 144 g formed respectively on the first, second, third, and fourthpassivation layers 110, 120, 130, and 140. The first, second, third, andfourth additional patterns 114 g, 124 g, 134 g, and 144 g may serve asconductive patterns required to provide power to the semiconductor chip200 or to electrically ground the semiconductor chip 200. As discussedabove with reference to FIG. 2B, the first, second, and third additionalpatterns 114 g, 124 g, and 134 g may prevent pattern abnormality such asundulation occurring when the second, third, and fourth passivationlayers 120, 130, and 140 are formed.

Referring to FIG. 4D, a semiconductor package 5 may be provided toinclude the semiconductor chip 200 mounted on the fourth connectionstructure 14 serving as a package substrate. As discussed above withreference to FIG. 2C, the fourth connection structure 14 may include thefirst dummy patterns 114 d formed on the first passivation layer 110and/or the second dummy patterns 124 d formed on the second passivationlayer 120. Alternatively, the semiconductor package 5 may include,instead of the first and second dummy patterns 114 d and 124 d, thefirst to fourth additional patterns 114 g to 144 g formed respectivelyon the first to fourth passivation layers 110 to 140, as shown in FIG.2B.

Referring to FIG. 4E, a semiconductor package 6 may be configuredidentically or similarly to the semiconductor package 5 shown in FIG.4D. Differently from the semiconductor package 5, the first passivationlayer 110 may be partially etched and becomes thinner. For example, thefirst passivation layer 110 may undergo an etching process to removesurface damages or foreign substances from the first passivation layer110 that are possibly produced when the carrier substrate 100 isdetached from the first passivation layer 110 in the fourth connectionstructure 14 of FIG. 2C. Additionally or alternatively, the etchingprocess may be performed to reduce a thickness of the first passivationlayer 110.

When the first passivation layer 110 decreases in thickness, the firstconductive patterns 114 may protrude outwardly from the thinned firstpassivation layer 110. The protrusion of the first conductive patterns114 may increase contact areas between the first conductive patterns 114and the external terminals 108. The increased contact areas may reducecontact resistances between the first conductive patterns 114 and theexternal terminals 108.

Referring to FIG. 4F, a semiconductor package 7 may be provided toinclude the semiconductor chip 200 and a semiconductor package 30 thatare mounted on the first connection structure 11 serving as a packagesubstrate. The semiconductor package 7 may have a package-in-packageconfiguration in which the semiconductor package 30 is mounted withinthe semiconductor package 1 of FIG. 3D. The first connection structure11 may be replaced with one of the second, third, and fourth connectionstructures 12, 13, and 14 shown in FIGS. 4B to 4E.

The semiconductor package 30 may include one or more semiconductor chips320 and 330 mounted on a package substrate 300, bonding wires 350 thatelectrically connect the semiconductor chips 320 and 330 to the packagesubstrate 300, and a molding layer 340 that encapsulates thesemiconductor chips 320 and 330. The semiconductor package 30 may beprovided within the molding layer 240 encapsulating the semiconductorchip 200.

Some of the fourth conductive patterns 144 may be used for electricalconnection between the first connection structure 11 and thesemiconductor chip 200. Others of the fourth conductive patterns 144 maybe used for electrical connection between the first connection structure11 and the semiconductor package 30. For example, the first connectionstructure 11 and the semiconductor chip 200 may be electricallyconnected to each other through the connection terminals 220, such assolder balls, between the chip pads 210 of the semiconductor chip 200and some of the fourth conductive patterns 144. The first connectionstructure 11 and the semiconductor package 30 may be electricallyconnected to each other through connection terminals 360, such as solderballs, between the package substrate 300 and others of the fourthconductive patterns 144.

The package substrate 300 may include an internal pattern 302 to whichthe bonding wires 350 and the connection terminals 360 are electricallyconnected. The internal pattern 302 may be configured identically orsimilarly to the first connection structure 11. For example, theinternal pattern 302 may include a lower conductive pattern 314 coupledto the connection terminal 360, an upper conductive pattern 334 coupledto the bonding wire 350, and an intermediate conductive pattern 324electrically connecting the lower and upper conductive patterns 314 and334 to each other.

The lower conductive pattern 314 may correspond to the first conductivepattern 114, the upper conductive pattern 334 may correspond to thefourth conductive pattern 144, and the intermediate conductive pattern324 may correspond either to the second conductive pattern 124 or thethird conductive pattern 134. The formation of the package substrate 300may be the same as or similar to that of the first connection structure11.

The package substrate 300 including the internal pattern 302 may serveas an interposer or a bi-layered redistribution layer. The firstconnection structure 11 may be replaced with one of the second, third,and fourth connection structures 12, 13, and 14 shown in FIGS. 4B to 4E.

According to the inventive concepts, there may be no occurrence ofpattern abnormality on a passivation layer between conductive patternssuch as relatively thick under-bump-metals and on a certain patternformed on the passivation layer. As such, the passivation layer or thecertain pattern may be free of the pattern abnormality that possiblyleads to electrical failure such as electrical short or open. Inconclusion, a connection structure and a semiconductor package includingthe same may improve in structural stability and electricalcharacteristics.

This detailed description of the inventive concepts should not beconstrued as limited to the embodiments set forth herein, and it isintended that the inventive concepts cover the various combinations, themodifications and variations of the above-described embodiments withoutdeparting from the spirit and scope of the inventive concepts. Theappended claims should be construed to include other embodiments.

1. A connection structure comprising: a first passivation layer havingan opening; a first conductive pattern that penetrates the firstpassivation layer and protrudes upwardly from the first passivationlayer; a second passivation layer on the first passivation layer andcovering the first conductive pattern; a second conductive pattern onthe second passivation layer and electrically connected to the firstconductive pattern; a third passivation layer on the second passivationlayer and covering the second conductive pattern; and an externalterminal in the opening and electrically connected to the firstconductive pattern, wherein the first conductive pattern is thicker thanthe second conductive pattern, wherein the second passivation layer isthe thickest among the first to third passivation layers, and wherein ahead segment of the first conductive pattern which horizontally extendson the first passivation layer has a thickness larger than that of aredistribution layer segment, of the second conductive pattern, whichhorizontally extends on the second passivation layer.
 2. The connectionstructure of claim 1, wherein the first conductive pattern furthercomprises: a tail segment that vertically penetrates the firstpassivation layer and has connection with the external terminal, whereinthe head segment of the first conductive pattern has connection with thesecond conductive pattern.
 3. The connection structure of claim 1,wherein the second conductive pattern includes: the redistribution layersegment that horizontally extends on the second passivation layer; and avia segment that vertically penetrates the second passivation layer andhas connection with the first conductive pattern.
 4. (canceled)
 5. Theconnection structure of claim 1, further comprising a third conductivepattern on the third passivation layer and electrically connected to thesecond conductive pattern.
 6. The connection structure of claim 1,further comprising an additional pattern on at least one of the firstand second passivation layers.
 7. The connection structure of claim 6,wherein at least one of the first and second conductive patterns isprovided in plural, and wherein the additional pattern is formed betweenthe plurality of first conductive patterns or between the plurality ofsecond conductive patterns.
 8. The connection structure of claim 6,wherein the additional pattern is one of: a dummy pattern electricallyisolated on the at least one of the first and second passivation layers;and a pattern either for electrical power delivery or for electricalground.
 9. The connection structure of claim 1, further comprising afirst seed pattern on a bottom surface of the first conductive pattern,the bottom surface of the first conductive pattern facing the externalterminal.
 10. The connection structure of claim 9, wherein the firstseed pattern is not provided at an interface between the firstconductive pattern and the external terminal.
 11. The connectionstructure of claim 1, further comprising a second seed pattern on abottom surface of the second conductive pattern, the bottom surface ofthe second conductive pattern facing the first conductive pattern.
 12. Aconnection structure comprising: a carrier substrate; a firstpassivation layer, a second passivation layer, and a third passivationlayer that are sequentially provided on the carrier substrate; a firstconductive pattern that penetrates the first passivation layer andprotrudes upwardly from the first passivation layer; and a secondconductive pattern on the second passivation layer and electricallyconnected to the first conductive pattern, wherein the first conductivepattern is thicker than the second conductive pattern, wherein thesecond passivation layer is the thickest among the first to thirdpassivation layers, and wherein a head segment of the first conductivepattern which horizontally extends on the first passivation layer has athickness larger than that of a redistribution layer segment, of thesecond conductive pattern, which horizontally extends on the secondpassivation layer.
 13. The connection structure of claim 12, wherein thefirst conductive pattern has a T shape comprising: the head segment thathorizontally extends on the first passivation layer; and a tail segmentthat vertically penetrates the first passivation layer.
 14. Theconnection structure of claim 12, wherein the second conductive patternis a redistribution layer which comprises: the redistribution layersegment that horizontally extends on the second passivation layer; and avia segment that vertically penetrates the second passivation layer. 15.The connection structure of claim 12, further comprising a thirdconductive pattern on the third passivation layer and electricallyconnected to the second conductive pattern.
 16. The connection structureof claim 15, wherein the third conductive pattern is a connection padwhich comprises: a pad segment that horizontally extends on the secondpassivation layer; and a via segment that vertically penetrates thesecond passivation layer.
 17. The connection structure of claim 12,further comprising an additional pattern on at least one of the firstand second passivation layers, wherein the additional pattern is one of:a dummy pattern electrically isolated on the at least one of the firstand second passivation layers; and a conductive pattern either forelectrical power delivery or for electrical ground.
 18. The connectionstructure of claim 17, wherein at least one of the first and secondconductive patterns is provided in plural, and wherein the additionalpattern is formed between the plurality of first conductive patterns orbetween the plurality of second conductive patterns.
 19. The connectionstructure of claim 12, further comprising: a first seed pattern on abottom surface of the first conductive pattern, the bottom surface ofthe first conductive pattern facing the carrier substrate; and a secondseed pattern on a bottom surface of the second conductive pattern, thebottom surface of the second conductive pattern facing the firstconductive pattern. 20-30. (canceled)
 30. The connection structure ofclaim 3, wherein the redistribution layer segment of the secondconductive pattern horizontally extends across the via segment of thesecond conductive pattern.
 31. The connection structure of claim 12,wherein the carrier substrate has a lower passivation layer, and thefirst passivation layer, the second passivation layer, and the thirdpassivation layer are sequentially provided on the lower passivationlayer.